SAMSUNG 850 EVO M.2 2280 1TB SATA III 3-D Vertical Internal Solid State Drive (SSD) MZ-N5E1T0BW Max Sequential Read: Up to 540 MBps Max Sequential Write: Up to 500 MBps 4KB Random Read: Up to 10,000 IOPS (QD1) Up to 97,000 IOPS (QD32) Controller: MGX 4KB Random Write: Up to 40,000 IOPS (QD1) Up to 89,000 IOPS (QD32) Power Consumption (Active): 2.3W/2.7W (Read/Write) Power Consumption (Idle): 50mW Max Shock Resistance: 1500G
