SAMSUNG 850 EVO 2.5 4 TB SATA III 3-D Vertical Internal Solid State Drive (SSD) MZ-75E4T0B/AM Max Sequential Read: Up to 540 MBps Max Sequential Write: Up to 520 MBps 4KB Random Read: Up to 10,000 IOPS (QD1) Up to 98,000 IOPS (QD32) Controller: MHX 4KB Random Write: Up to 40,000 IOPS (QD1) Up to 90,000 IOPS (QD32) Power Consumption (Active): 3.1W/3.6W (Read/Write) Power Consumption (Idle): 70mW Max Shock Resistance: Non-Operating: 1500G, duration 0.5m sec, 3 axis
